Techwin China

Butterfly Laser Diode

Techwin 785/830/1064nm Butterfly Laser Diode designed specifically for Raman spectroscopy detection. Techwin 785/830/1064nm Butterfly Laser Diode utilizes Volume Bragg Grating (VBG) stabilization. This ensures excellent wavelength stability, narrow spectral linewidth, and high side-mode suppression ratio (SMSR) even at high power output levels.

The laser diode is housed in a standard 14-PIN butterfly package and is available with either 105/125 multimode fiber coupled output with an FC/PC connector or free space beam output, offering good compatibility. This series of products is widely used in Raman detection, optical sensing, and other related fields.

Butterfly Laser Diode

Key Features:

Applications

Parameters

Parameters Min Typ Max Unit
Output Power. 1200 mW
Center Wavelength 785/830/1064 nm
Spectral Width(FWHM) 0.1 nm
Side mode Suppression Ratio 30 dB
Operating Current 2.0 A
Operating Voltage 2.2 V
TEC Temperature Setting 15 40 C
TEC Current 2.5 A
TEC Voltage 4.8 V
Thermistor Resistance @ 25℃ 10
PD Operating Voltage -5 V
PD Current 2.0 mA
Operating Temperature -20 50
Storage Temperature -40 85

Mechanical Dimensions and PIN Definition:

PIN Description PIN Description
1 TEC(+) 8 PD(+)
2 N.A. 9 LD(-)
3 N.A. 10 N.A.
4 Rt. 11 N.A
5 Rt 12 N.A.
6 LD(+) 13 N.A.
7 PD(-) 14 TEC(-)

Ordering Information: